Thermoelectric Properties of Iron Disilicide Prepared by …

The thickness of the silicide is proportional to the square root of time t and t, respectively.
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1.55µm photoluminescent iron silicide prepared by thermal ..

Chen, “Auto-Correlation Analysis for the Determination of the Structure of Amorphous Interlayers in Ultrahigh Vacuum Deposited Molybdenum Thin Films on Silicon,”

In particular, FeSi and TiSi2 can be grown to tens of micrometers in grain size.16
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Synthesis of ultrathin semiconducting iron silicide …

The silicothermic production of magnesium in a plasma furnace has been shown to be technically viable, (assuming the addition of an efficient condenser, such as an ISP-type splash condenser to the process).

However, in device applications, silicides were grown on laterally confined silicon.
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In nickel on blank (001)Si, NiSi is formed and stable at 350–700°C.6 It has been reported that dopants do not affect NiSi formation.22 However, striking effects of B+ and BF2+ implantation on the growth of epitaxial NiSi2 on silicon were observed.

We also present the synthesis of numerous metal silicide and germanide 1D nanostructures.
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Iron Silicide FeSi 2; Lanthanum …

The amorphicity of the substrate apparently played an important role in promoting the formation of polycrystalline NiSi2 at low temperatures.23–25NANOSILICIDES

the value for silicide synthesis in bulk layers of iron …

The surface features are used for the fabrication of epitaxialβ-FeSi2 nanostructures on strained Si/Si0.8Ge0.2 substrate.32

IRON SILICIDE, CasNo.12022-95-6 health rune …

Both boron and fluorine atoms introduced by ion implant into silicon were found to promote the epitaxial growth of NiSi2 on silicon at low temperatures.

from the Fluorination of Iron Silicide

The direct observation of the formation of clusters surrounded by the heavily damaged silicon lattice strongly suggested that silicon is the dominant diffusing species in forming the silicide.

International Journal « Nanoelectronics lab

Lateral confinement was found to exert significant influence on the epitaxial growth of NiSi2 and CoSi2 on silicon.19–21 The epitaxial silicides were relevant to the device applications as the contact size shrank to sub-100 nm.

Nanoscience and Nanotechnology Letters

For larger sizes, they adopt a long thin shape that allows better elastic relaxation of the island’s stress.47 Experimental data on silicide island formation [e.g., Au4Si/Si(111)48 and CoSi2/Si(100)]48 also exhibited the elongated island growth.

Staff Profile - City University of Hong Kong

An example of the Si/TbSi2/Si heterostructure is shown in Figure 4.18 On the other hand, almost all transition metal silicides can be grown epitaxially on silicon to a certain extent.